Norsat and Microwave Journal present the latest eBook on ‘SATCOM GaN Power Amplifier Design’. The articles in this eBook are very informative, and cover military satellite terminal basics, market trends and the outlook for this market. With a major shift from GaAs to GaN as the semiconductor device material of choice, Norsat compares the two technologies covering the reasons for this shift and the advantages of GaN technology for SATCOM amplifiers. Another article covers the design of a broadband, highly efficient, GaN power amplifier. The last article reviews GaN SSPA technology for space-based applications covering the challenges to device design and reliability as they start to replace TWTs in this area. Read this eBook to learn about these important topics in SATCOM amplifiers.